Zhikharevich V. Physical properties of narrow-gap multicomponent semiconductor solid solutions АІІВVI

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0407U001772

Thesis Registration Form

0407U001772.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

30-03-2007

Specialized Academic Board

Д 76.051.01

Essay

The component distribution in the crystals grown by zone melting method has been carried out. The segregation coefficients of the CdTe, MnTe and ZnTe were established. The main band properties were studied and empirical formulas for calculation of the band gap and intrinsic carrier concentration have been proposed. The galvanomagnetic properties were studied. The calculation values of acceptors concentrations and their activation energy are in a good agreement with experimental data.

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VISNOVKI.doc

VSTYP.doc

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