Saleh M. Elements and Devices for automatics on the base of potentially-unstable two-gates semiconductor Shottky structures.

The object of the research is the process of transformation of information signals in special tools for information processing with frequency modulation. The purpose of thesis is improvement of technical characteristics of elements and devices of automatics by using potentially-unstable two-gates semiconductor Shottky structures. Methods that were used are based on matrix theory, the theory of comfortable reflections, the theory of transformers of immitance, the theory of analysis of electrical schemes, the theory of stability and also on methods of physical and computer modeling. The generalized immitance mathematical model of the two-gates semiconductor Shottky structure is developed for the first time in the thesis. Analytical dependences of operating parameters of the fields Shottky structures in the area of potential instability of frequency of transformed immitance and the terms of realization on their basis of high-Q analogues of inductance and control elements are received for the first time. The circuit, including of the two-gates potentially-unsteady Shottky structure, which provides the realization of semiconductor equivalent of inductance as a semiconductor microcircuit in the wide range of frequencies is designed and tested. The circuits of combined dynamic negatrons, based on two-gates Shottky transistors are firstly developed. The circuits of microwave active on-chip filters, which are able to operate at frequency range of tens of gigahertz are designed and tested. The degree of implementation - within the area. The sphere (area) of use - electronics.