Kozynets' O. Physical properties of silicon photodetectors with inserted delta- and psi-layers

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0407U003838

Thesis Registration Form

0407U003838.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

24-09-2007

Specialized Academic Board

Д 26.001.31

Taras Shevchenko National University of Kyiv

Essay

A possibility to create the porous silicon-silicon solar cell with incorporated to porous silicon layer Сs+ ions has been shown.The surface recombination velocity at interface porous silicon-silicon was defined in air and humidity ambient .A Ti-(ultra thin porous silicon <10 nm)-p-Si solar cells have been elaborated. The introduced interface porous silicon layer into Schottky contact is tunnel-transparent for the minority charge carriers and forms the potential barrier for major charge carriers.

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Files

avtoreferat.doc

r1.doc

r1.doc

r2.doc

r3.doc

r4.doc

r5.doc

spisoklit.doc

visnovci.doc

vstup.doc

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