Petuhov V. The structure, kinetics of growth and properties of borides and boridonitrides of the vanadium and tantalum thin films

Object: thin films, obtained by the method of RF-magnetron deposition of targets VB2 and TaB2 unreactive (in the environment of argon) and reactive (in the environment of mixture of argon and nitrogen) methods. The aim is: decision of task on establishment of physical processes in relation to forming of structure, composition and properties of pellicle coverages which formed in the V-B-N and Ta-V-N systems, and also their influence on physical-mechanical properties of obtained coverages. Methods: computer design by the method of Monte Carlo, electronic microscopy, X-ray diffraction, secondary ionic mass-spektrometry, IK-spektrometry, measuring of mikrohardness, nanoindention. Results: the optimum interval of besieging of thin films of diboride vanadium and tantalium, which provides the receipt of maximal on a thickness thin films with composition near to stehiometric, is definite. Influence of geometry of the RF-magnetrone system and regime of deposition on the changes of descriptions of stream of thecondensed particles is definite. The character of influencing of change of correlation of reactive (nitrogen) and working (argon) gases on the processes of formed and growth of the explored thin films is definite. It is explored and is accounted for the mechanism of the nitridization target VB2 in an environment "argon + nitrogen" resulting in absence of boride phases in the obtained thin films. The method of receipt of multilayers borides and nitrides structures of transitional metals with the set physico-mechanical properties is offered, in one technological loop, using one target. Field of application: physics of solid state, microelectronics, machinebuilding