Kremenetskaya Y. The influence of structure of contacts on the characteristics of Microwave devices and Microwave transmitters

The object is dependence of current of emission on the applied voltage for different diode contact structures and generation of electromagnetic oscillations in a range 100-1000 GHz; the aims to decision of a problem of limitation of application of semiconductor devices in millimetric and submillimeter ranges and creation Microwave transmitters of high stability on the basis of semiconductor structures for the systems of the radio engineering; the methods - the theoretical analysis and synthesis, mathematical design; the new is the first presented results of receipt of generation of oscillations in a range 100-1000 GHz in vacuum-semiconductor structures with possibility of the electronic reorganization of the frequency and new ways of creation of generators of noise and generators-synthesizers of net of frequencies; the results - the methods of engineering calculation are developed Microwave transmitters of millimetric and submillimeter ranges taking into account the features of contact structures