Sokolovskyi I. The influence of dimensional restrictions on nonequilibrium processes in photo-electric converters

This paper covers theoretical modeling of the efficiency of photoconversion and related effects in cases of absence or simplified versions of proper theories. The analysis of dimensional effects is emphasized. The specific features of this paper are the consideration of base region and emitter region carrier lifetime complex structure and surface recombination on frontal and rear surfaces detailed calculation. Specifically Shockley-Read recombination, band-to-band radiative recombination, exitonic radiative and non-radiative recombination and band-to-band Auger recombination are considered in the bulk lifetime calculation. Effective surface recombination velocities on frontal and rear surfaces are calculated self-ajointed considering Shockley-Read recombination on surface centers, band bending values near frontal and rear surfaces and such emitter and collector regions parameters as minority carriers lifetime, doping level and thicknesses of these regions. Tunnel current consideration in Si solar cells(SCs) current-voltage characteristic at low temperature allows agreement with experimental data. The value of ideality coefficient for short comparative to diffusion length Si SCs depending on injection level is achieved considering different base region recombination mechanisms. The new method for rear-metallization SC parameters calculation suggested. Photoconversion efficiency of such SCs compared with conventional SCs efficiency. Hydrogenated amorphous Si SCs analytical theory is developed considering features of electrophysics and optics of this material. Direct- and indirect-band quantum well SCs photoconversion features are analyzed theoretically. GaAs - InGaAs quantum well SCs photocon-version efficiencies for concentrated and non-concentrated illumination are calculated numerically using SimWindows program.