Shynkarenko V. Structural relaxation of nanosized Та2О5 films grown on the p-Si substrates induced by microwave treatment

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0409U000578

Thesis Registration Form

0409U000578.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

23-01-2009

Specialized Academic Board

Д 26.199.01

V. Lashkaryov Institute of semiconductor physics

Essay

The thesis deals with investigation of non-thermal effect of microwave irradiation on the MIS structures with Та2О5 films. The dependence of the effect of microwave treatment on the technological aspects of structure formation is considered. A promising line of solid state physics is developed in the thesis. This line is related to both purposeful technological annealing of MIS structures and their tolerance to microwave irradiation. For the fist time the nonmonotonic changes of the electrophysical and structural parameters of MIS structures with Та2О5 films exposed to microwave irradiation (frequency of 2.45 GHz) were found as well as the optimal exposure time range was determined. It is shown that the above changes affect, first of all, the region near the insulator-semiconductor interface. The assumption that decrease of intrinsic stresses in the above region leads to improvement of MIS structures stability was checked and confirmed. Doping of the Та2О5 film with titanium was used for reduction of intrinsic stresses.

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Files

Dysertazija--1_гл_(12-32).doc

Dysertazija--2_гл (33-49).doc

Dysertazija--2_гл (33-49).doc

Dysertazija--3 глава(50-95).doc

Dysertazija--3 глава(50-95).doc

Dysertazija--4_гл (96-110).doc

Dysertazija--Висновки (111-112).doc

Dysertazija--Додаток (113-119).doc

Dysertazija--Лiтература (120-130).doc

Dysertazija--Титул (1-11).doc

Автореферат.doc

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