Okhremchuk Y. Electrochemical obtaining of semiconductive films of CdS and CdTe

Electrochemical formation of optically active semiconductive films of CdS and CdTe. Development of theoretical bases and technological principles of obtaining of polycrystalline CdS and CdTe films by an electrochemical method as optically active elements in the devices of sun energy conversion. Complex of chemical, physical and physicochemical methods of analysis was used. The regularity of electrochemical formation of thin polycrystalline CdS films on an anode, films of CdTe, by layer-by-layer deposition of individual cadmium and tellurium with the subsequent annealing of the got system, from electrolytes on the basis of DMSO; cathodic formation of cadmium deposits from an electrolyte on the basis of DMSO, tellurium from DMSO, DMF, AN solutions of tellurium (IV) chloride are established. Effect of electrolysis parameters is set on deposits morphology. The principle technological schema of the electrochemical formation of CdS, CdTe films and CdS/CdTe system, which foresees the use of the reserved cycles of technological solutions and thermal streams, is offered. Composition of the gelous Red-Ox system is offered for the control of electrophysical parameters of the got films. The experimental measurings of films were carried out, applying is planned in industry. Components of electronic charts, solar power engineering.