Vasylenko V. Scanning near-field optical microscopy of semiconductor surface with inhomogeneous curriers distribution

In the presented work the method of computation of near-field images of semiconductor surface with inhomogeneous carriers or excitons distribution under it was built. This method is based on analytical solution of Lippmann-Sсhwinger equation. Method of effective susceptibility was used to solve Lippmann-Sсhwinger equation, because this method is suitable for near-field images modeling both in ordinary near -field optical scanning microscopy and in ultra-fast near-field optical scanning microscopy. Method of effective susceptibility is universal, because it allows computing near - field image polarization peculiarities, resonance properties of systems under investigation and it takes into account nonlinear interactions in system. Appearance and properties of near-field images in dependence of electrons or excitons distribution under semiconductor surface have been thoroughly analyzed in presented work. Appearance of near-field images has been computed and method of computing of near-field luminescent images in dependence of excitons distribution which evolves near inhomogeneous kind of quantum dot was proposed. Analysis of susceptibility nonlinear component influence on near-field images appearance was carried on example of excitons distribution under semiconductor surface. Obtained results could be useful for experimental results interpretations, which was obtained in investigation of excitons and free carriers transportation, scattering or relaxation in surface of semiconductors.