Gomonnai O. Pressure effects in quasitwodimensional chalcogenide ferroics

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0409U003709

Thesis Registration Form

0409U003709.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

09-10-2009

Specialized Academic Board

К 61.051.01

Essay

The thesis is devoted to the studies of phase diagrams and hydrostatic pressure- and temperature-induced physical effects in layered semiconductor ferroelectrics with incommensurate phases. The influence of hydrostatic pressure on the temperature variation of dielectric, pyroelectric and ferroelectric parameters of TlGaSe2, TlInS2, CuInP2S6, and CuInP2Se6 crystals is observed, (р, Т) phase diagrams being built on the base of the studies. Transformation of characteristic temperature anomalies of dielectric permittivity and dielectric loss angle tangent as well as of ferroelectric parameters is observed in TlInS2 crystals in the range 580 < р < 660 MPa, related to the existence of a complex polycritical region. Pressure coefficients of variation of phase transition temperatures and Curie-Weiss constants in TlGaSe2, TlInS2, CuInP2S6, and CuInP2Se6 crystals are determined.

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Files

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