Golovko Y. Communication of impurity distribution in silicon single-crystals with technological growth parameters

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0409U004177

Thesis Registration Form

0409U004177.pdf

Applicant for

Golovko Yuri Vyktorovych

Specialization

05.02.01 - Матеріалознавство

Date of defense

11-06-2009

Specialized Academic Board

К 32.075.02

Lutsk National Technical University

Essay

Mathematical modeling of impurity distribution in a silicon single-crystal, which founded on the equation of an impurity mass balance are developed. In models change of impurity distribution parameters during silicon single-crystal is taken into account and such physical parameters by which it is impossible to have the sizes in conditions of industrial-scale production do not use.

Thesis supervisor

Shvec Evgen Yakovych

Official opponents

Баранський Петро Іванович
Носко Ольга Анатоліївна

Files

aref.doc

dis1.doc

dis2.doc

dis3.doc

dis4.doc

dis5.doc

dis6.doc

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