Safonov I. Carrier distribution control in multiple quantum well heterostructures and laser dynamics in its basis

Object of research: a semicnductor laser with multiple quantum-well active region. Aim: theoretical description of the carrier transport processes under modification of the geometric parameters and composition of the layers in the active region and the confinement area, and physical substantiation of the purposeful improvement of the dynamic properties of quantum-well lasers. Results, novelty: The methods for control of the spatial and energy distribution of the charge carriers through variation of the geometric parameters and composition of the multilayer quantum-well heterostructures are systematized and improved. It is proposed for the first time to use tunnel-coupled quantum wells in the active area of the optically pumped semiconductor lasers to achieve simultaneously an effective pumping and lasing. The theory of structures without rupture of edges of zones was developed: for the first time structures without rupture of edges of zones with final quantity of layers are considered; transmission spectra for superlattices without rupture of edges of zones are studied; comparison with usual superlattices is done. Further research of modulation characteristics of semiconductor lasers is done. It is suggested to use models with continuously increasing frequency of modulation for calculation the characteristics. Application area: optics, laser physics.