Snyala Y. Nature of point defects in cadmium telluride, doped with V group elements

The thesis is dedicated to the point defect nature investigation in CdTe single crystals, doped by elements of the V group of Periodic table, under Cd or Te vapor pressure in the 470-1170 K temperature range and to the electrophysical properties of doped material research. It was established that from Phosphorus to Bismuth the acceptor behaviour of the dopants weakens, whereas the donor influence becomes stronger, the occurrence depth of acceptor level of element in Te sublattice was grown. The main point defects under Cd vapour pressure are substitution defects in the tellurium sublattice in CdTe:As, CdTe:Р and CdTe:Sb single crystals and substitution defects in the cadmium sublattice in CdTe:Bi and CdTe:V single crystals.