Lukyanov A. Properties of modified carbon films and photosensitive structures with antireflection and protective covers

Mechanisms of influence of RF power and Nitrogen amount in the precursor gas onto the properties of DLC films were suggested. Optimal anti-reflection conditions of Si solar cells (SCs) by DLC films were proposed. Antireflection properties of DLC films deposited on Cd1-хZnхTe (x~0,04) were studied. Formation of intermediate layers during DLC deposition was detected and explained. The optical properties of the films are stable under the thermocycling and ultrasonic treatment. The effect of UV and g-irradiation on the DLC films properties was investigated. In the framework of proposed mechanism UV quanta break hydrogen bonds, reduce hydrogen content in the film, activate oxygen of air, and the oxygen atoms diffuse into the film, increase the amount of sp3C atoms and CO, CN bonds. g-irradiation results in sp2 hybridization of C atoms, releasing and diffusing of hydrogen into the Si substrate, creation nitrogen bonds in the film. The increasing of nitrogen amount in the films enables to increase the film resistance to the g-irradiation. Influence of g-irradiation onto Si SCs with and without DLC antireflection films was studied. It was shown that photoelectric parameters are deteriorated under the g-irradiation due to creation of centers of recombination and decreasing of diffusion length of minority charge carriers. However, degradation of SCs with DLC films is less than SCs without DLC due to Passivation of dangling bonds by hydrogen released from the DLC film.