Bilan' O. Obtaining of CdTe Semiconducting Films from Dimethylsylfoxide Solutions by Pulse Electrolysis

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0411U001539

Applicant for

Specialization

  • 05.17.03 - Технічна електрохімія

02-03-2011

Specialized Academic Board

Д 26.002.13

Publishing and Printing Institute of Igor Sikorsky Kyiv Polytechnic Institute

Essay

The thesis is devoted to developing the scientific and technological foundations of electrolytic polycrystalline semiconductor films of CdTe with a high quality conversion of solar energy to electricity. Found that a semiconductor film of CdTe is possible obtained by electrochemical codeposition from dimethylsulfoxide solutions of salts: CdCl2 and TeCl4. Revealed that the overall speed of cadmium and tellurium codeposition is higher, than the sum of partial reaction speeds due to cadmium underpotential deposition. Cadmium and tellurium codeposition from dimethylsulfoxide solutions by pulse electrolysis is accompanied by tellurium cementation. The obtained films of CdTe show optical sensitivity in a wider range of light waves than pure cadmium telluride. The developed technological layout of thin polycrystalline films of CdTe by pulse electrolysis from dimethylsulfoxide solutions, feasibility study which has proved its economic efficiency.

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