Sukhov R. Size effects while melting-crystallization in mono- and double-layer film systems

Object of research: condensed films of pure metals (Sn, Bi) and binary layered film systems (Sn-Bi, Ge-Au) with mass thickness 1-60 nm on amorphous carbon substrates. Aim: determination of physical laws of liquid phase formation in Ge-Au eutectic binary layered film systems and morphological structure changes of condensed films of pure metals (Sn, Bi) and binary layered film systems (Sn-Bi, Ge-Au) during their melting and crystallization. Results, novelty: For the first time the critical thickness of contact melting in eutectic binary layered film systems (i.e. the thickness of the first component film which is in contact with the thick film of the second component below which the formation of liquid phase does not take place) is revealed. For the first time the size dependence of the melting temperature of Ge-Au eutectic is experimentally determined and the diagram describing formation, temperature and dimensional stability of the liquid phase in the eutectic composition film system Ge-Au is built. The data on the relation between the mass thickness and the morphological characteristics (substrate cover, the size distribution of islands, number of islands per unit surface) of film systems formed by melting of Sn, Bi and Sn-Bi of eutectic composition vacuum condensates on amorphous carbon substrates are got.