Losiev F. Influence of Strong Electric Fields on a Volt-Amper Description of Semiconductor Devices.

The object of study is the physical processes of the emergence and development of current failures of semiconductor devices caused by the influence of currents given external electromagnetic radiation. The object of research is current-voltage characteristics of semiconductor devices (diodes) under an external pulse of electromagnetic radiation in circulating failures. Methods. In determining the physical mechanisms of current failures of semiconductor devices and receiving payment ratio for their quantitative characteristics in the applied analytical methods for solving the Maxwell equation for the restricted solid-state structures within the hydrodynamic and kinetic approximations. Decision dispersiynyh systems of equations "given current - semiconductor structure" were obtained by the method of coupled modes. Experimental studies of current failures of semiconductor devices have been conducted on the basis povirnoyi scheme established by international standards "Hosudarstvennaya poverochnaya scheme for funds maksymalnыh measurement values napryazhennostey pulse of magnetic fields of electrical and GOST 8.540-93", built in NDPKY "Lightning" NTU "KhPI" (high-voltage pulse plant Etalon - REMP) theoretical and practical results-designed physical model the appearance of a type of current failures of semiconductor element base elektroradiovyrobiv, which is based on the interaction of currents, given the external pulsed electromagnetic radiation, with their own variations of semiconductor structures, components elektroradiovyroby. We show that this interaction leads to energy losses induced currents on the excitation of electromagnetic oscillations of its own semiconductor structure (mode of generation of oscillations) and characterized by changes in current-voltage characteristics napvprovidnykovyh devices (the appearance of circulating bounce); novelty-in analytic form first made the calculated value, defining degree of deviation of current-voltage characteristics of semiconductor devices, depending on the physical properties of materials, components and device parameters of external electromagnetic interference. Comparative analysis of quantitative characteristics of the current failure depending on the spatial orientatsiyi current pulsed electromagnetic field relative to the semiconductor device (given current is sent along or normal to the boundary) allows to solve the optimization problem as possible rejection performance of semiconductor devices, the degree of implementation, results are implemented in the Institute Radiophysics and Electronics NAS of Ukraine within state budgetary research MES of Ukraine: "Investigation of linear and nonlinear solid-state structures using electromagnetic waves and microwave range of charged particles" (DR № 01061U011978) and in the educational process at the department "Information systems" NTU "KhPI ".