Lysiuk I. Temperature, irradiation, and acoustic effects in narrow-gap mercury-cadmium-telluride and photodiodes on its basis

The thesis contains the results demonstrating the influence of temperature, -radiation, fast neutron radiation, ultrasonic loading on current-voltage characteristics of CdXHg1-XTe epitaxial photodiodes, and mechanisms of ultrasonic damping. The energy of recombination centers Еt=Е +0,075 еВ (х=0,22) and Еt=Е +0,16 еВ (х=0,28) has been established measuring and modeling the current-voltage characteristics. charge transfer mechanism have been found from the current-voltage characteristics at various temperatures before and after low-temperature annealing, namely, the tunneling along the dislocation as a result of p-n junction shift to the interface with high dislocation density. Studying -irradiation (1 MeV) of CdXHg1-XTe (х=0,22) photodiodes by doses up to 1,6?107 rad, it has been established that post-radiation electric properties are determined by the original defects. It has been provided to the conclusion that irradiation influence of fast neutrons on MCT photodiodes is analogous to that of them onto crystals. The rapidity of donor centers introduction n/ Ф=0,6 0,8 cm-1 at the dose Ф=5 1014 cm-2 has been obtained. Found acoustic injection of charge carriers into CdXHg1-XTe (х=0,28) photodiodes has been shown to be qualitatively described by the theory of acoustic injection in piezosemiconductor p-n junction. The elastic modules magnitudes С11=5.35 1010 Pa, С12=3.08 1010 Pa, С44=2.01 1010 Pa for р-type Cd0.2Hg0.8Te have been obtained. The ultrasound damping coefficient peaks and their in theoretical explanation have been found the ranges of temperature 200-300 K and frequency 10-55 MHz.