But A. Purposeful stimulation of alteration of the structural defects fields of the CdZnTe and ZnSe:Te сrystals

Object: industrial Cd1-xZnxTe (x<0.2) and ZnSe:Te crystals, grown from fusion by the Bridgman and Bridgman-Stockbarger methods. The purpose: mechanism establishment of the electromagnetic and electric the fields influencing on the character of the elastic and electric fields alteration of the CdZnTe and ZnSe:Te crystals structural defects and development of tools for its stimulation. Methods: chemical etching, optical (optical-polarization, shadow, optical and IR-microscopy), dielectric, photo-electric and acoustic. Results: relationship between the scale of the certain slip lines substructure and the level of remaining tensions in the ZnSe:Te crystals is set. Signatures of photo-electric and photo-dielectric responses are offered the analysis of configurations of which allowed to expose and analyse the character of the photoresponse structure change as a result of the certain structural defects fields alteration. The method of the I(lambda) spectral photoresponse registration and method of management of the I(lambda) photocurrent spectrum form by the change of form, frequency of repetition and duration of electric indignations are offered. The method of electro-acoustic treatment of crystals, which is adopted at the state enterprise "Research technological institute of instrument engineering", is developed and patented. The field of application: solid-state physics, physics of semiconductors and dielectrics, sensor and solid-state electronics