Volyar R. Development of micrometallurgical process of alloyed functional material received on a base of silicon for alternative power engineering

The thesis is aimed at establishing regularity of technological factors and thermal conditions of silicon ingots formation in micrometallurgical process to increasing of its semiconductor characteristics The analysis of domestic and foreign literature on the effect for the semiconductor characteristics silicon ingots for the formation conditions of silicon and impurities, which pass into the bar when it is formed, has been carried out. For the first time the influence of rate cooling of the ingots in the process of their formation at its semiconductor characteristics has been established. Investigations of the oxygen and carbon impurities effect on the semiconductor characteristics of silicon ingots have been carried out. The relationship between the content of impurities and the life time value has been determined. The possibility of the life time controlling when the concentration of oxygen and carbon impurities changed has been shown. The technology and the device for ingot precision doping of silicon ingots in the process of silicon ingots formation is developed. The developed technology and the device allow to run by amount of an alloying impurity of boron in the process of ingots formation allow to provide the fixed resistivity of ingots As a result of carried out experiments the advanced technologies of the process of silicon ingots formation with output increasing of finished product at 7 … 10 abs.% in the parameter value of the lifetime of non-equilibrium carriers of a charge have been developed and offered for industrial application.