Gudymenko A. Х-ray diffractometry of subsurface layers and heterostructures based on Si(Ge) and In(Ga)As.

Dissertation is devoted to the development of experimental methods for multi-layered planar structures characterization and calculation of basic structural properties from the X-ray reflectivity spectra in Bragg geometry. It is established that it is possible to control the degree of relaxation of SiGe layers grown pseudomorphically on strained Si substrates using the ultrasonic treatment at the implantation of He-ion into SiGe. The increase of degree of relaxation in SiGe at ultrasonic treatment was shown.The influence of anisotropic distortions of crystal lattice in the superlattice on diffraction rocking curves obtained by high resolution X-ray diffraction has been studied. The parameters of distorted crystal lattice of layers, shape and parameters of interfaces between them were determined with help of dynamical diffraction theory.It is established that in InGaAs/GaAs structures with quantum wires at rapid thermal annealing (550С - 850С, 30 sec.) the driving mechanism of structure transformation is the relaxation of residual strain due to the thermal-activated and deformation-enhanced processes of In/Ga interdiffusion on the quantum wires-2D layer interface.