Boyko V. Radiative recombination in А2В6 and А3В5 semiconductors under influence of deformation.

The dissertation is devoted to the study of influence of deformations on radiative recombination processes in semiconductors with various band gap Eg: in narrow gap semiconductors (NGS) СdxHg1-xTe and InSb, and in wide band gap semiconductors: CdTe, Cd (Zn, Se) Te, CdSe. The first part of dissertational is devoted to the research on an increase in radiative recombination in InSb under uniaxial elastic strain that influences the fundamental bandgap. It was established in this work that the lifetimes of the main recombination channels can be considerably changed due to due to reconstruction of the bandgap. Namely, the direct radiative transition became more probable, but irradiative Auger-recombination can be suppressed. As a result, the quantum yield of radiative transitions can be increased several times. Be studying the wide gap semiconductors was established that deformation creates new recombination centers connected with nonequilibrium dislocations. It is established, that generation and movement of nonequilibrium dislocations changes significantly optical and optoelectronic characteristics, namely due to appearance of a group of new lines of emission and absorption. By using of the spectrally and spatially resolved method it was established the nature of two series of emission which appeared to arise due to electronic states of dislocations (dislocation core) and the special type of defects, which arise due to dislocation movement.