Ievtushenko A. Features of the structure of nitrogen doped ZnO films, deposited by magnetron sputtering, and their photoelectric properties

The dissertation is devoted to the study of physical processes and mechanisms that determine the efficiency of photoelectric transformation in undoped and nitrogen doped ZnO films. It was determined that the application of layer-by-layer deposition at high-frequency magnetron sputtering allow to grow highly textured structurally perfect ZnO films on both amorphous and crystalline substrates. It was first carried out the nitrogen doping of ZnO films during their deposition on Si3N4/Si and Si substrates as well as did the complex investigations of the introduction of nitrogen into ZnO films as acceptor impurity and its influence on ZnO film microstructure and surface morphology, optical properties and electronic states. It was revealed that the co-doping of ZnO by nitrogen and aluminum increases the nitrogen solubility in ZnO lattice and provides growing more structurally perfect ZnO film in comparison with films doped by nitrogen only. It was revealed that the introduction of nitrogen into the lattice of zinc oxide can significantly increase the photosensitivity and the speed of response of ZnO-based photoresistors. It was first determined that nitrogen concentration increasing in ZnO leads to an increase in photosensitivity of ZnO:N-based photodiodes. Ni/ZnO:N/p-Si phototransistor structures was developed in which the mechanism of internal amplification for photocurrent was implemented in result the significant photosensitivity 210 A/W at ? = 390 nm and high performance with temporal constant 100 ns was achieved.