Bachuk V. Growth mechanisms, topology and electrical properties of the lead telluride thon films and nanostructures.

The analysis of the topology of lead telluride vapor-phase nanostructures by surface condensates modeling methods on the mode of atomic force microscopy and cellular automata executed at first in thesis. The proposed geometric model of the terrain allows to describe all stages of nanostructures formation in axiomatic form depending on the both the conditions growth and physical parameters of the system. At first established that the growth processes of nanostructures of lead telluride on monocrystalline substrates plumbum telur/(0001) mica, and plumbum telur /(111) bariy ftor two have activated character, and kinetics of their formation exponentially dependent to the deposition time of vapor on substrate. And, this deposition time is the exponent of substrate temperature. Was define the spatial forms of nanocrystallines, their mutual orientation, and orientation relative to the substrates in heterostructures. It is shown that investigated values of technological factors is implemented in all cases the Folmer-Weber mechanism taking into account the orientation and energy influencing. Was proposed and implemented distribution histograms represent of height of nanoformations on their superposition of three Gaussian functions. It is shown, that the size of individual nanoislands defined processes of Ostvald maturation provided simultaneous action the diffusion and Wagner mass transfer mechanisms, whose contribution depends on technological factors and evaporation temperature deposition.