Yurchyshyn L. Physic and chemical properties and defects subsystem germanium telluride and solid solutions on it based.

In this work the defective subsystem germanium telluride crystals and solid solutions GeTe-Bi2Te3: specifies type of dominant point defects, charge states and their concentration dependence of the deviation from the stoichiometric composition within the homogeneity. Methods crystal-quasichemical and thermodynamic potentials found that nonstoichiometric germanium telluride dominant defects are vacancies germanium, which determine the dependence of hole concentration on temperature and chemical composition of the crystal. Vacancies tellurium and anti-structural germanium atoms under any investigated process conditions do not affect the concentration of free holes, and the impact of anti-structural defects on the concentration of charge carriers is noticeable only at temperatures above 750 K and excess tellurium concentrations above 0.04 at. % Te.