Luchenko A. Physical-chemical modification of the single-crystal silicon surface and its properties

The thesis is devoted to the development of methodological features a homogeneous nanostructured silicon films as a new multifunctional material and study its properties for targeted control characteristics of nanostructured films for using in micro- and nanoelectronics. The surface morphology research showed that during the chemical etching surface modification of substrates occurs and nanodimensional structures appears. Formation mechanisms of the nanostructured layer on the monocrystalline silicon surface were provided. It was shown, the silicon film photosensitivity depends on the thickness of nanostructured silicon film; nanostructured silicon films with thickness of 10-15 nm have maximum photosensitivity for the visible range of the spectrum and 20-25 nm for the ultraviolet. The local density of electronic states near the Fermi level were studied by scanning tunneling spectroscopy of the nanostructured silicon surface, with varying thickness of the nanostructured film. Changes of thickness of nanostructured silicon films affects type conductivity. Investigation of gas sensitivity structures based on nanostructured silicon has shown that there are resonant frequencies at which the parameters of the second derivative of the current-voltage characteristic reaches a maximum, and when changing the gas environment is uneven shift of resonant frequencies.