Stepanchikov D. The excitonic states and absorption edge of AII3BV2 tetragonal semiconductors

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0414U000189

Thesis Registration Form

0414U000189.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

27-12-2013

Specialized Academic Board

Д 61.051.01

Essay

The object is influence of excitonic states on the absorption edge, luminescence spectra and band structure of AII3BV2 semiconductors; the aim is the theoretical description of specificity excitonic states, studying of their displays in optical spectrums of volume and low-dimension AII3BV2 semiconductors; the methods are the methods of theories of solid and quantum mechanics, group-theoretical methods, elements of linear algebra and theory of matrices, numerical calculations; the results are theoretical study of free and localized excitonic states in the volume and low-dimension AII3BV2 semiconductors; the scope is semiconductor electronics.

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