Krayovskyy V. Sensitive elements of thermal converters based on semiconductor n-HfNiSn

Current study presents the ground and the new addressing of important scientific application problem of ensuring the stability and reproducibility of temperature measurements in the range 4,2-1500 K, which is manifested in the development of physical principles of forecasting and implementation of electrical resistive and thermoelectric high-temperature sensors based on new thermometric materials HfNi1-xCoxSn, HfNi1-xRhxSn, HfNiSn1-xSbх. Methodology of stabilization and reproducibility of thermometric characteristics of materials based on n-HfNiSn has been designed and implemented and temperature sensors based on them have been implemented by doping the base material with atoms of Co, Rh and Sb. Based on investigated materials electrical resistance and thermoelectric temperature sensors have been implemented and established patterns of conversion functions with stable and reproducible characteristics in the temperature range 4,2-1500 K.