Ukolov A. Defect formation and low-dimensional atomic structures in the surface layers of germanium under the influence of the deformation in the temperature range 300 - 600K

Formation of defects in the surface layers of Ge during bending deformation or compression in the temperature range 300-600K with simultaneous ultrasonic irradiation the investigated. The new structure - sensitive probe method for determining the level of defects in the surface layers, based on the measurement parameters of recombination of nonequilibrium charge carriers. Methods of optical and atomic force microscopy study of surface samples made of single-crystal Ge, cyclically deformed with simultaneous ultrasonic treatment. Established that the deformation of crystals on the surface generates periodic defect structure due to mass transfer in the presence of stress gradient and the occurrence of directed a diffusive flows. The first time the possibility of creating on Ge by surface diffusion of dislocation-type nanostructures pit-island properties are examined by atomic force microscopy and spectroscopy of Raman scattering.