Rudenko R. Influence of tin on the formation of nanocrystalline silicon in thin films of a-Si and a-SiOx

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0415U002622

Thesis Registration Form

0415U002622.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

25-05-2015

Specialized Academic Board

Д 26.001.23

Taras Shevchenko National University of Kyiv

Essay

Dissertation research focuses on the influence of isovalent impurity of tin on the formation of nanocrystalline silicon in thin films of silicon and silicon oxide. It is found that the formation of crystalline phases in a-SiSn occurs at a lower temperature than in a-Si. It is shown that the tin impurity reduces and limits the growth of medium-sized silicon crystallites in the amorphous matrix of silicon with increasing temperature of isochronous annealing. It is found that doping with tin of silicon oxide films leads to a decrease in crystallization temperature of amorphous silicon inclusions. In the tin doped silicon oxide films Si nanocrystal sizes are smaller compared with the samples without tin.

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Files

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dis.pdf

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