Romaniuk A. Structural, electronic and vibrational properties of low-dimensional heterostructures based on GaN, InAs, and ZnO

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0415U003995

Thesis Registration Form

0415U003995.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

01-07-2015

Specialized Academic Board

Д.26.199.01

Essay

Complex investigation of the optical and structural properties of the device structures based on GaN, InAs and ZnO, namely - GaN Gunn diode structures with a vertical design, AlGaN/GaN (HEMT) nanoheterostructures, InAs/AlGaAs heterostructures with quantum dots, ZnO films and Zn1-xCdxO (х >= 0,12) solid solutions.

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