Pirohov A. Physical and technical base of the tin dioxide films obtaining for gas sensors base layers and solar cells front contact

It is established that the phase transformation of the target surface prevents of the electrical conductivity reproducibility non-reactive DC magnetron sputtering tin dioxide film with 300 nm thickness. It was shown that the intensity of phase transformation increases with the decreasing of the magnetron power and decreases with increasing of oxygen concentration in the working gas. For the tin dioxide film with 50 nm thickness the electrical conductivity reproducibility defined as the critical thickness of spontaneous crystallization. It is proved that the working gas moisture inhibits the crystallization process and prevents the phase transformation in the tin dioxide films. The optimal magnetron sputtering technological modes for formation of tin dioxide layers for gas sensors are determined. It was established that the presence of nanosized tin dioxide layer at the interface ITO/CdS can increase efficiency up to 11.4% for solar cells ITO/SnO2/CdS/CdTe/Cu/Au, formed on glass substrates, and for solar cells formed on flexible polyamide films - up to 10.8%, while reducing the cadmium sulfide layer thickness up to 0,2 microns. The optimum thickness of the tin oxide in solar cells on CdS/CdTe base, formed on the glass substrate is 80 nm, and the flexible substrates - 50 nm.