Zhuravel I. Growth, structure and properties of C/Si nanoscale multilayers

The thesis is devoted to the ascertainment of the formation features of C/Si nanoscale multilayers, structural and phase transformations in these multilayers during annealing, destruction mechanism of multilayers at heightened temperatures. The prospects of using of C/Si multilayer mirrors in 17 - 35 nm wavelength range as well as utilizing of C/Si bilayer films as nanoscale antifrictional coatings were viewed. It was ascertained that in as-deposited state C/Si multilayers represent alternate layers of amorphous carbon and silicon separated by intermixing zones with the thickness of ? 0.6 nm. Their density is different, it amounts to 2.75 g/cm3 ("C on Si" interface) and 2.4 g/cm3 ("Si on C"). The density of both zones is higher than the density of carbon and silicon (2.12 and 2.27 g/cm3, respectively), for "C on Si" zone it is related with presence of amorphous SiC, for "Si on C" with presence of diamond-like carbon inclusions. It was revealed that temperature dependence of period of C/Si multilayer in the range of 50 - 1000°C is non-monotonic. Such dependence is related with two processes that simultaneously take place in the multilayer: graphitization of carbon, which leads to increase of the thickness of C layer, and increase of the thickness of the intermixing layers due to interdiffusion between carbon and silicon.