Zhuravlyov A. Deposition of heteroepitaxial Si1-x-Gex structures gas phase, plasma-chemical and sublimation methods

The dissertation is devoted to development of gas phase, plasma chemical and sublimation deposition methods heteroepitaxial structures Si1-x-Gex (0,01<x<0,05) doped B and P on single-crystal substrates Si and Si0,97-Ge0,03:B (1018 сm-3) for use in optoelectronic devices registering radiation in the near infrared region. Based on these studies were set optimum parameters of gas-phase method deposition, substrate temperature - 1400-1600 К, pressure in the reaction chamber - 10-104 Pa, the flow rate of H2-90-120 liter/hour, flow SiCl4-1,8-12 liter/hour, ratioGeCl4/SiCl4-0,005-0,03, value doping additives BCl3 or PCl3 not more than 1-3 % in relation to the costs of chlorides SiCl4+GeCl4. The range of parameters of plasma chemical method coincided with gas-phase process with the exception of substrate temperature, which was due to lower steam mixture H2+SiCl4+GeCl4 discharge HF power that was 1-3 kW. A source of atoms Si-Ge-В and Si-Ge-P substrates on Mo and W for sublimation deposition heteroepitaxial structures was developed. Source expands the range of substances, temperature range of evaporation and vapour pressure of Si-Ge-В and Si-Ge-P which significantly improves performance properties and processability deposition. It is shown that the resulting of sublimation method multilayer heteroepitaxial structure on single-crystal substrates Si,Si0,97-Ge0,03:B (1018 сm-3) buffer layer Si0,95-Ge0,05:B (1018 сm-3) and the upper epitaxial layers Si0,95-Ge0,05:B (1017-1018 сm-3) and Si0,99-Ge0,01:P (1018 сm-3) characterized photo-emf and photosensitivity in near IR area at wavelength ~0,8-1 µm, which is important in the further development of optoelectronic devices.