Myroniuk D. The effect of certain radiation types on the properties of ZnO films

Dissertation is devoted to the study of high-energy electrons and swift heavy xenon ions (SHI) effect on microstructure, phonon and band spectra of undoped and doped zinc oxide films deposited by magnetron sputtering. It was established the effect of high-energy electron irradiation (10 MeV) on the microstructure and luminescent properties of zinc oxide films deposited on sapphire substrates. From the photoluminescence spectra the formation of complex defects such VZn-ZnO and VO-OZn it was found. For the first time it was observed that films textured along the ZnO c axis on silicon substrates irradiated by SHI (Xe26+) (E > 1 MeV/nucleon) leads to the recrystallization of crystallites. It was found that the effect of SHI irradiation on the structure of ZnO films essentially depends on the type of substrate. It was established that silicon is not suitable for use as substrates for zinc oxide films in devices in the cases of hard radiation background. However, with significant irradiation fluence the films retain crystal lattice structure and texture (in the case of films deposited on sapphire substrate). Thus, the ZnO films can be used in optoelectronic devices under the influence of high background radiation. For the first time found that the ZnO films, doped with small concentrations of cadmium (0.4 and 0.5 at. %) are more resistant to the SHI irradiation, compared with undoped ZnO films.