Lukianova O. Semiconductor barrier heterostructures n-Zn(O,S)/p-SnS and n-ZnS/p-Cu2ZnSnS4 for thin film solar cells of a new generation

The optimal conditions for the synthesis of single-phase tin sulfide SnS and kesterite Cu2ZnSnS4 layers by electrochemical deposition of metallic precursors followed by sulfurization were determined. Reusable collapsible reactor was designed for the precursor sulfurization. SILAR-deposited nanocrystalline Cu2ZnSnS4 and SnS layers were used to fill pores and voids in the SnS and Cu2ZnSnS4 films to get combined p-SnS and p-Cu2ZnSnS4 absorber layers. Al/n-ZnS/р-Cu2ZnSnS4/Mo/Al and Al/n-Zn(O,S)/р-SnS/Mo/Al semiconductor barrier heterostructures were designed and fabricated. They have demonstrated optimal for the solar cells series resistances. However, heterostructure n-ZnS/р-Cu2ZnSnS4 is more perspective for photovoltaics due to its rectifying barrier height and shunt resistance. At the same time kesterite base layers synthesis is more complex on the precursor production stage and requires a relatively high sulfurization temperature.