Havryliukh V. The structure and electronic properties of nanoscale metal films with cubical lattice.

On the basis of the method of quench condensation of the thermally evaporated metal vapour at the substrate temperatures not higher than 0,1 of the metal melt temperature by using of surfactant underlayers preventing coalescence of metal crystallization nuclei, methods for formation of homogeneous, isotropic, polycrystalline, electrically continuous copper, gold, chromium, palladium and manganese films with a thickness of 2-5 nm and the beforehand known average linear sizes of the crystallites D independent of film thickness d have been formed. The required sizes of crystallites were set by preliminary deposition on the dielectric amorphous substrate with germanium, silicon or antimony underlayers with appropriate thickness, less than 5 nm. Low-temperature annealing of metal films at temperatures not exceeding 0,2-0,3 of the melt temperature ensures preservation of original crystallites size and long time stability of films charge transport parameters.