Kovalenko M. Electronic energy structure, optical and gas-sensing properties of ZnO based nanostructures

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0417U002730

Thesis Registration Form

0417U002730.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

30-06-2017

Specialized Academic Board

Д 35.051.09

Ivan Franko National University of Lviv

Essay

The work is devoted to the systematic theoretical investigation of structural, electronic and gas-sensing properties of ZnO based nanostructures (thin films, nanoclusters, nanotubes, nanowires, nanoribbons).The approbation of first principles calculation methods of band structure was carried out on bulk crystals of A3B7 and A2B6 groups and on carbon nanostructures. Such approach provided the accuracy and adequacy of the band simulation of ZnO based nanostructures and satisfactory agreement of the calculations results with experimental data.

Read more

Files

aref.doc

aref.doc

dis.pdf

Similar theses

0523U100013

Luniov Sergiy Valentynovych

Influence of defective structure on the electrical and tensoelectrical properties of n-Ge and n-Si single crystals and film nanostructures based on them

0522U100117

Ptashchenko Fedir Oleksandrovich

Influence of long-range interaction between impurity atoms and surface defects on the process of formation, conductivity and sensor sensitivity to NO2 and NH3 molecules of porous silicon and other silicon structures

0421U104048

Mykytiuk Taras I.

Electrical, optical and photoelectric processes in CdS/CdMgTe thin-film heterostructures

0521U102010

Borkovska Lyudmyla Volodymyrivna

Electronic and ionic processes in light-emitting semiconductor materials based on II-VI and III-V compounds

0521U101814

Korotyeyev Vadym Vyacheslavovich

Effects of interaction of terahertz radiation with a strongly nonequilibrium electron gas in bulk and low-dimensional semiconductor structures