Osadchuk I. Radiomeasuring devices based on frequency parametric microelectronic pressure transducers

In the dissertation work results of the researches directed on increasing sensitivity and accuracy of measurements of pressure by creation of a new method and radiomeasuring devices are stated. A method for measuring pressure on the basis of the tensoreactive effect in radiomeasuring frequency parametric mi-croelectronic transducers with tensosensitive elements is proposed. It differs from existing ones by using the dependence of the impedance of the tensosensing elements on the pressure, which make it possible to convert the pressure into a frequency and, in principle, to increase sensitivity and accuracy of the pressure measurement. For the first time mathematical models of the tensoreactive effect in tensosensitive semiconductor diodes, bipolar and field-effect transistors have been developed, which differ from existing ones in that the parameters of diodes, bipolar and field-effect transistors are taken into account, which is the basis for calculating the total resistance of tensosensive elements from pressure. Mathematical models of radiomeasuring frequency parametric microelectronic pressure transducers have been created, in which, unlike the existing ones, the influence of pressure on elements of nonlinear equivalent circuits of devices based on transistor structures with negative differential resistance has been taken into account, which allowed obtaining the transformation functions and the sensitivity equation. The radiomeasuring multichannel instruments for determining muscular memory and physical train-ing of archery riders were developed on the basis of the developed frequency parametric microelectronic pressure transducers, which made it possible to increase the accuracy of the determination of the leverage force of the shoulders, the distribution of the load on the fingers of the athlete. The number of tensile strengths of the shoulders set limits of 0.025%. The radiomeasuring frequency parametric microelectronic pressure transducers based on bipolar field and field transistor structures with passive and active inductive elements were developed, in which bipolar and field transistors, diodes, resistive and capacitive elements were the tensosensitive elements, while the sensitivity of the converters was 0.35 kHz/kPa - 2.85 kHz/kPa in the pressure range from 10 kPa to 200 kPa. The value of the maximum total pressure measurement error of the developed instruments was de-termined to be 0.36%. Key words: radiomeasuring frequency parametric transducer, pressure, tensoreactive effect, auto-generator, frequency.