Burchenia A. Directional control of growth parameters for growing of structurally perfect diamond type Ib single crystals of weighing 5 to 10 carats in six-anvil apparatus.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0419U001543

Applicant for

Specialization

  • 05.02.01 - Матеріалознавство

03-10-2019

Specialized Academic Board

Д 26.230.01

Essay

The actual scientific and technical task on the growing of structurally perfect diamond single crystals in the Fe-Ni-C system by temperature gradient method using on six-anvil type CS-VII cubic apparatus was determined. It is make possible thanks to the peculiarities of di-rectional control of growth parameters studying and witch influence on the formation of single crystals habitus. It is allowed receive of diamonds type Ib single crystals weighing up to 10 carats with varying degrees of development of flying faces of the cube or octahedron. Designs of control and cooling systems for the six-anvil CS-VII were developed. These systems give ability to work in automatic mode with the length of growing cycles up to 220 h. The functional dependence of power change during the growing cycle up to 220 h for defined configuration of the heating circuit was been established to provide the required temperature values at the crystallization front. The kinetics of diamond single crystals growth on a single seed in a six-anvil apparatus with change of temperature conditions and increasing mass of the crystal up to 10 carats was studied. It is shown that the mass increasing of full-grain crystal forms during entire growing cycle ensured by thermal state of the growth cell changing. Rapid of temperature change consisting of gradually increasing of temperature after growing for 80-100 h at a rate of 0.3-1.0 С/hour.

Similar theses