Baranov V. Control of distribution and charge state of the activator ions in Ti:sapphire during HDC growth

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0420U100172

Applicant for

Specialization

  • 05.02.01 - Матеріалознавство

11-12-2019

Specialized Academic Board

Д 64.169.01

Institute for single crystals NASU

Essay

Thesis for the degree of Candidate of Technical Sciences (speciality 05.02.01- materials research”. – Institute for Single Crystals of NAS of Ukraine, Kharkiv, 2019. For the first time, plane-parallel Ti:sapphire plates measuring 100×100×30 mm3 and characterized by homogeneous structure, uniform distribution of the activator within the limits of C 1%   per 100 mm. To achieve these results, there were investigated the conditions of morphological stability of the crystallization front taking into consideration the transparency and thermal conductivity of the crystal and the melt, convection in the melt, for a wide range of the activator concentrations. Studied was the influence of these factors on the critical crystallization rate. The raw material subjected to carbothermal treatment was used to obtain the crystals with the ratio 4 3 [Ti][Ti]  <0.01 not containing light scattering inclusions and characterized by FOM up to 180.

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