Menyajlo V. Modeling of the processes of chemostimulated migration of atom particles in semicond surface adjacent arears

The dissertation is devoted to modeling of some processes occured in semiconductor layers attached to the surface while they are interacted with atomic hydrogen, particularly: diffusion of atomic hydrogen into semiconductor bulk with due regard for surface and bulk reactions (chemosorption and recombination). As a result, analytical expression of reactions velocity have been obtained and (the example with hydrogen-germanium) shows that atomic hydrogen recombination processes in semiconductor layers attached to the surface don't affect diffusion processes occured in them considerably; formation of point defects in semiconductors under the influence of the energy of surface chemical reactions. As a result, analutical expressions for SCD's coefficients have been obtained (and their quantitative indium, aluminium in gallium arsenite, for copper, gold in germanium). Predominant mechanism of CSD in the above systems depending upon the type of diffused impurity and experimental conditions has been determinedw ith the help of these expressions and their quantitative indices. The obtained results confoprm well to existing experimental data and may be used for further investigation of CSD's processes for determination of quantitative characteristics of this process as well as for choice of optimal conditions under which chemostimulated diffusion occurs with maximum efficiency.