Bojko Y. The modern approaches for definition of parameters of deep levels in semiconductors by the transient spectroscopy method.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0499U001556

Thesis Registration Form

0499U001556.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

24-05-1999

Specialized Academic Board

Д 26.001.31

Taras Shevchenko National University of Kyiv

Essay

The dissertation is devoted to research of parameters of deep levels in semiconductors when the traditional approach based on the transient spectroscopy technique does not allow to receive the appropritate parameters. Automater transient spectrometer of deep levels focused on research of modern semiconductor devices with transient capacity is developed and made. The techniques of reception of parameters of deep levels are devoted for the cases of hte capacuty relaxation for deep levels with close temporary constant (case of quasi-continuous DLTS-spectrum) with use of the two-channel strobe-control store. A numder of semiconductor devices is investigated with the use of the developed techniques.

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