Far R. Microwave diagnostics of structurally ordered domains in amorphous semiconductors

The dissertation is devoted to development and study of the microwave method of diagnostics the ordered domains in the amorphous semiconductor layers, based on the resonator measuring transducers (MT) application. The MT theory is developed on the basis of two coaxial parts of the cylindrical resonator with H012 type oscillations, the sample, being studied, are fixed between them and the MT on the basis of a toroidal resonator with a shortening capacity and an external distribution of the sample in capacitance measurement aperture. A new photomodulation version of the microwave method for diagnostics crystal indusions into amorphous semiconductors is offered and studied with selenium amorphous layers used as an example (англійською мовою).