Tarnovs'kyj M. Research of fotoelectric properties of arsenide-gallic field effect transistors with Schottky barrier and development of optoelectronic commutation devices

Object of research - digital optoelectronic commutation devices. The purpose - development of principles of construction of the optoelectronic switching element, based on the using of optical sensitivity of arsenide-gallic field effect transistors with Schottky barrier (GaAs-MESFET). Methods of researches and equipment - analitical, experimental, a personal computer, measuring devices. Theoretical and practical results - the mathematical models of static and dynamic characteristics of the optically controlled GaAs-MESFET have been developed; the principles of construction on the optically controlled GaAs-MESFET of digital optoelectronic switchings and optoelectronic logic gates on their base have been defined; recommendations work out over apparatus performance of commutation node, capable to organize a high-speed data exchange between abonents. Introduction novelty - has been confirmed by Ukraine patents; Introduction range - within a branch. Introduction area (branch) - data commutation syst ems, high-speed digital optoelectronic devices .