Kondrat O. Formation of Ge33As12Se55 - p-Si heterostructures, their mechanical features and peculiarities of charge beares transfrerence

Investigation object: Ge33As12Se55 chalсogenide glass - crystalline p-Si heterostructure. Investigation purpose: to determine the peculiarities of the transition and accumulation charge bearers in heterostructures Ge33As12Se55 - p-Si, and also to discover the influence of technological regimes of film sputtering, thermotreatment and high-energy electron irradiation on their mechanical properties on the basis of the calculations and experimental investigations. Investigation methods and apparatus: laser interferometry, U-I characteristics on direct and alternating current, V-C characteristics, transmission electron microscopy, Auger-electron spectroscopy, laser dilatometer, breaking machine. Theoretical and practical results, novelty of new-applied: The possibility of theoretical determination of electron affinity energy of multicomponent chalcogenide glasses is shown. For the first time the mechanism of charge bearers transference through heterojunction Ge33As12Se55 - p-Si in constant electric fields is established. The role of surfacial states on the interface of Ge33As12Se55 - p-Si heterostructure is discovered and the cheme of its energy zone with the account of these states is built. The technology of heterostructure fabrication is optimized. The search method of optimal composition of glasses, stable to high-energy electron irradiation, is elaborated. Degree of application: It is planned. Sphere (area) of application: micro- and optoelectronics.