Datsenko O. Formation of porous silicon layers with high quantum yield of photoluminescence

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0499U002083

Thesis Registration Form

0499U002083.pdf

Applicant for

Specialization

  • 01.04.05 - Оптика, лазерна фізика

22-11-1999

Specialized Academic Board

Д 26.001.23

Taras Shevchenko National University of Kyiv

Essay

The results of investigation of the problem of increasing the photoluminescence (PL) efficiency of porous silicon (PS) samples and study of the evolution of the porous layer luminescent properties in the air are reported. The technique of increasing the external quantum yield of PL up to 20% is described. The reactions of porous structure oxidation are found to take place mainly in the near-surface layer of PS. Two models of porous structure PL are suggested.

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