Khrypko S. The Structure and physical characteristics of silicon compositions with disordered layers

The results of disordered layers classification in semiconductors are presented. It is understood from published data, that the main methods of layers shaping is an anode etching and implantation by high energy ions. It is presented the review of results of theoretical and experimental investigation of wide-zone semiconductor - isolator - narrow-zone semiconductor photoelectric converters shaping. The advantage of using fine ITO-films at fabrication of photoelectric converters is shown. The specific role disordered layers as anti-reflecting covering (especially for porous silicon) is specified. The data of optical and electrophysical characteristics of porous silicon depending on used equipment and conditions of shaping are discussed. It is shown that in modern domestic research practical is missing the experience of photoelectric converters fabrication base on wide-zone semiconductor (ITO)- isolator - -porous silicon compositions. List of methods of gettering defects is presented for active areas of c rystal. The particularities of factor of absorption determination and reflection factor calculation, which was used in the work is presented. The techniques of layers thickness, resistivity and surface resistance, spectral, current-voltage and capacitance-voltage characteristics measurement for photoelectric converters and study of porous silicon density are presented. The study of disordered layers structure of silicon was carried by means of optical, electronic raster and x-raying microscopy. Density of defects in active areas of transistor structure was measured by means of selective etching. The technique of electronic-microscopic study for defects of structure in laminated silicon compositions was presented. The microdifractive pictures shows that samples with porous layer have the reflexes, which have charge of presence of amorphous phase.