Klad'ko V. The influence of point defects and their associations on X-ray scattering by real semiconductor crystals

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0500U000146

Thesis Registration Form

0500U000146.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

22-05-2000

Specialized Academic Board

Д26.001.23

Essay

The processes of X-rays scattering in the crystal defects and with the deviation of chemical composition from stoichiometrical were discovered. The dynamical character of X-ray scattering (pendulum oscillation of intensities, the suppression of the Borrmman effect) for the quasiforbidden reflections in the condition of strong influence of anomalous dispersion was expe rimentally descovered. The inculcation work while in semiconductor material science.

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