Klyuj M. 3. The properties of ion-modified thin-film and multi-layer structures based on IV group elements.

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0500U000260

Thesis Registration Form

0500U000260.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

25-09-2000

Specialized Academic Board

Д26.001.23

Essay

3. Properties of thin-film and multi-layer structures based based on IV group elements as well as mechanisms of their modification under action of ion implanta- tion, mechanical strains and combined treatments have been investigated. The mechanisms of ion- beam stimulated formation of silicon structures with with buried dielectric and semiconductor layers have been established. The processes of strain re- laxation in ion-beam modified Si-Ge films were studied. The peculiarities of optical and mechanical properties properties for diamond-like carbon films subjected to ion implantation were analyzed. Improvement of solar cells and porous silicon parameters was ob- served after deposition of diamond-like films.

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